SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 3

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.3
Electrical Characteristics , at T
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Repetitve avalanche causes additional power losses that can be calculated as P
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3 Soldering temperature for TO-263: 220°C, reflow
4 C
5 C
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
4)
5)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
j
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
= 25 °C, unless otherwise specified
Page 3
V
I
V
f=1MHz
V
V
V
I
T
V
V
V
V
D
D
j
DS
GS
GS
DS
DD
DD
DD
GS
DD
=125°C
=3.8A
=6A, R
=0V to 480V
=0V, V
=0V,
=400V, V
=640V, I
=640V, I
=0 to 10V
=640V, I
2*I
Conditions
D
G
*R
=15 ,
DS
DS(on)max
D
D
D
GS
=25V,
=6A
=6A,
=6A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
typ.
785
390
3.3
20
22
42
25
15
65
14
27
*f.
4
8
6
SPD06N80C3
2005-10-05
max.
75
11
35
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
pF
ns
nC
V
DSS
DSS
.
.