BSP296E6327 Infineon Technologies, BSP296E6327 Datasheet - Page 8

• Manufacturer Part Number: BSP296E6327
• Description: MOSFET N-CH 100V 1.1A SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP296E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP296; BSP296INTR; SP000011106

BSP296
Rev. 2.1
2009-08-18
Page 8