BSP296 E6433 Infineon Technologies, BSP296 E6433 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single BSP296 E6433
Manufacturer Part Number
BSP296 E6433
Description
MOSFET N-CH 100V 1.1A SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP296 E6433
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 1.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
1.8V @ 400µA
Gate Charge (qg) @ Vgs
17.2nC @ 10V
Input Capacitance (ciss) @ Vds
364pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSP296E6433T SP000011107
•
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
SIPMOS Small-Signal-Transistor
Type
BSP296
BSP296
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Reverse diode dv/dt
I
Gate source voltage
ESD (JESD22-A114-HBM)
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
S
A
A
A
A
Qualified according to AEC Q101
Pb-free lead plating; RoHS compliant
=1.1A, V
=25°C
=70°C
=25°C
=25°C
DS
=80V, di/dt=200A/µs, T
Package
PG-SOT223
PG-SOT223
j
= 25 °C, unless otherwise specified
jmax
Tape and Reel Information
L6433: 4000 pcs/reel
L6327: 1000 pcs/reel
=150°C
Rev. 2.1
Page 1
Symbol
I
I
dv/dt
V
P
T
D
D puls
GS
tot
j ,
T
stg
1B (>500V, <1000V)
Marking
BSP296
BSP296
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
DS
DS(on)
0.88
1.79
±20
4.4
1.1
6
Packaging
Non dry
Non dry
PG-SOT223
4
2009-08-18
100
0.7
1.1
BSP296
1
Unit
A
kV/µs
V
W
°C
2
VPS05163
V
Ω
A
3
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BSP296 E6433 Summary of contents
SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package PG-SOT223 BSP296 PG-SOT223 BSP296 Maximum Ratings Parameter Continuous drain ...
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
Power dissipation tot A BSP296 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area ...
Typ. output characteristic parameter ° 3.7V 3.9V 4.1V 4.3V 1.6 4.5V 10V 1.4 1.2 1 0.8 0.6 0.4 0 0.5 1 ...
Drain-source on-state resistance DS(on) j parameter : BSP296 2.8 Ω 2.4 2.2 2 1.8 1.6 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 0 -60 -20 ...
Typ. gate charge parameter 1.1 A pulsed BSP296 0 max 0 max 6 0 max 4 ...
Rev. 2.1 Page 8 BSP296 2009-08-18 ...
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