IPP80N06S2L-07 Infineon Technologies, IPP80N06S2L-07 Datasheet - Page 5

• Manufacturer Part Number: IPP80N06S2L-07
• Description: MOSFET N-CH 55V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 150µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3160pF @ 25V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218831

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
1
); T
); V
10 V
GS
j
j
DS
= 25 °C
= 6V
2
2
4
175 °C
V
V
DS
GS
25 °C
3.5 V
3 V
2.5 V
[V]
[V]
4 V
6
-55 °C
3
8
page 5
10
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
250
200
150
100
16
14
12
10
50
8
6
4
2
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
20
j
= 25 °C
3 V
50
40
I
I
D
D
100
60
[A]
[A]
IPB80N06S2L-07
IPP80N06S2L-07
80
150
3.5 V
100
2005-12-27
4.5 V
10 V
4 V
120
200