IPP80N06S2L-07 Infineon Technologies, IPP80N06S2L-07 Datasheet - Page 4

• Manufacturer Part Number: IPP80N06S2L-07
• Description: MOSFET N-CH 55V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S2L-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 150µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3160pF @ 25V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218831

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
250
200
150
100
10
50
1
0
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 4 V
50
1
V
T
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
100
10
10
10
= f(t
10
80
60
40
20
0
-1
-2
-3
0
C
10
); V
0
p
-7
0.05
)
0.01
0.1
0.5
GS
10
≥ 10 V
p
-6
/T
single pulse
50
10
-5
10
T
t
-4
C
100
p
[°C]
[s]
10
-3
IPB80N06S2L-07
IPP80N06S2L-07
10
150
-2
10
2005-12-27
-1
200
10
0