NTD3055L104-1G ON Semiconductor, NTD3055L104-1G Datasheet - Page 7

• Manufacturer Part Number: NTD3055L104-1G
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD3055L104-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.104 Ohms
• Forward Transconductance Gfs (max / Min): 9.1 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 12 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.104Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD3055L104-1G; NTD3055L104-1GOS

L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
DETAIL A
C
0.228
5.80
c
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
DPAK (SINGLE GAUGE)
ROTATED 90 CW
0.244
c2
0.101
DETAIL A
6.20
H
C
2.58
http://onsemi.com
L
CASE 369C−01
L1
ISSUE D
5
7
A1
0.118
H
3.0
0.063
1.6
SCALE 3:1
C
Z
SEATING
PLANE
6.172
0.243
NOTES:
inches
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
mm
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
STYLE 2:
DIM
A1
b2
b3
c2
L1
L2
L3
L4
A
D
H
PIN 1. GATE
b
c
E
e
L
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
0.090 BSC
0.020 BSC
−−−
0.108 REF
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
2.74 REF
0.51 BSC
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−