NTD3055L104-1G ON Semiconductor, NTD3055L104-1G Datasheet - Page 3

• Manufacturer Part Number: NTD3055L104-1G
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD3055L104-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 104 mOhm @ 6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.104 Ohms
• Forward Transconductance Gfs (max / Min): 9.1 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 12 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.104Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD3055L104-1G; NTD3055L104-1GOS

0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
16
12
24
20
1.8
1.6
1.4
1.2
0.8
0.6
8
4
0
1
2
0
−50
0
0
8 V
6 V
V
V
−25
GS
V
I
V
D
DS
1
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
GS
= 6 A
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 5 V
4
= 5 V
Figure 3. On−Resistance versus
T
J
0
, JUNCTION TEMPERATURE (°C)
2
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
8
3
Temperature
50
5 V
4
12
T
75
J
T
= 100°C
T
J
5
J
= −55°C
100
= 25°C
16
TYPICAL CHARACTERISTICS
6
125
20
http://onsemi.com
7
150
4.5 V
3.5 V
4 V
3 V
24
175
8
3
10,000
1000
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
100
10
24
20
16
12
1
8
4
0
0
1
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
1.5
V
DS
V
V
V
GS
GS
DS
GS
≥ 10 V
T
10
Figure 2. Transfer Characteristics
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
= 0 V
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 100°C
2
I
T
D
J
, DRAIN CURRENT (AMPS)
2.5
= 25°C
20
and Gate Voltage
8
versus Voltage
T
T
J
J
3
= 100°C
= 150°C
T
J
3.5
12
30
= −55°C
T
T
4
T
J
J
J
= −55°C
= 100°C
= 25°C
16
40
4.5
5
20
50
5.5
24
60
6