BSP171P L6327 Infineon Technologies, BSP171P L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP171P L6327
• Description: MOSFET P-CH 60V 1.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP171P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 2V @ 460µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 460pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP171P L6327; BSP171PL6327INTR; BSP171PL6327XT; SP000089226

Rev 2.4
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
0.1
10
70
65
60
55
50
45
40
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25
-20
D
=-1 mA
10
20
t
T
AV
j
60
[°C]
[µs]
100
100
C °125
140
C °100
C °25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-1.9 A pulsed
g s
5
0.2 VBR(DSS)
Q
Q
gate
g
Q
sw
[nC]
Q
g d
10
0.5 VBR(DSS)
0.8 VBR(DSS)
BSP171P
2007-02-08
Q
gate
15