BSP171P L6327 Infineon Technologies, BSP171P L6327 Datasheet
BSP171P L6327
Specifications of BSP171P L6327
BSP171PL6327INTR
BSP171PL6327XT
SP000089226
Related parts for BSP171P L6327
BSP171P L6327 Summary of contents
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SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant Type Package BSP 171 P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified ...
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Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 2) Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Output charge ...
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Power dissipation P =f(T ) tot A 2 1 [° Safe operating area =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter -4 Typ. transfer characteristics I ...
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Drain-source on-state resistance R =f =-1 =-10 V DS(on 500 400 98 % 300 200 typ. 100 0 -60 - [° Typ. capacitances C =f ...
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Avalanche characteristics parameter: T j(start 0 [µ Drain-source breakdown voltage V =f =-1 mA BR(DSS ...
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Package Outline SOT-223: Outline Footprint Dimensions in mm Rev 2.4 Packaging Tape page 8 BSP171P 2007-02-08 ...
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