NTD4860NT4G ON Semiconductor, NTD4860NT4G Datasheet - Page 4

• Manufacturer Part Number: NTD4860NT4G
• Description: MOSFET N-CH 25V 10.4A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4860NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 10.4A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1308pF @ 12V
• Power - Max: 1.28W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.040
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.004
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
0
--50
10V
2
I
V
Figure 3. On- -Resistance vs. Gate- -to- -Source
D
GS
V
= 30 A
--25
DS
3
V
Figure 1. On- -Region Characteristics
Figure 5. On- -Resistance Variation with
= 10 V
GS
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
1
T
J
4
0
, JUNCTION TEMPERATURE (°C)
4 V
25
5
2
Temperature
50
Voltage
6
T
J
75
7
= 25°C
3
TYPICAL PERFORMANCE CURVES
100
8
125
9
4
I
T
D
J
= 30 A
= 25°C
http://onsemi.com
150
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
10
5
175
11
4
10000
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.011
1000
100
60
50
40
30
20
10
10
0
10
2
0
Figure 4. On- -Resistance vs. Drain Current and
V
T
Figure 6. Drain- -to- -Source Leakage Current
V
J
DS
GS
V
= 25°C
4
V
DS
≥ 10 V
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, GATE--TO--SOURCE VOLTAGE (VOLTS)
20
1
6
I
D
, DRAIN CURRENT (AMPS)
T
8
vs. Drain Voltage
J
Gate Voltage
= 25°C
T
30
2
V
V
J
T
T
GS
GS
10
J
= 125°C
J
= 125°C
= 150°C
= 11.5 V
= 4.5 V
12
3
40
T
14
J
= --55°C
16
50
4
18
20
60
5