IXFK520N075T2 IXYS, IXFK520N075T2 Datasheet - Page 4

• Manufacturer Part Number: IXFK520N075T2
• Description: MOSFET N-CH 75V 520A TO-264
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™ HiPerFET™r

Specifications of IXFK520N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 520A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 545nC @ 10V
• Input Capacitance (ciss) @ Vds: 41000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 520
• Rds(on), Max, Tj=25°c, (?): 0.0022
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
200
180
160
140
120
100
300
250
200
150
100
1.0
0.1
50
80
60
40
20
0
0
0.3
3.0
0
f
= 1 MHz
0.4
3.5
5
Fig. 9. Forward Voltage Drop of
4.0
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
4.5
J
0.6
15
Intrinsic Diode
= 150ºC
V
V
V
GS
SD
DS
5.0
0.7
- Volts
20
- Volts
- Volts
T
J
= 150ºC
- 40ºC
5.5
0.8
25
25ºC
C iss
C oss
C rss
T
J
= 25ºC
6.0
0.9
30
6.5
1.0
35
7.0
1.1
40
10,000
1,000
100
200
180
160
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
0
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
20
DS
= 175ºC
= 260A
= 10mA
= 25ºC
= 37.5V
Fig. 12. Forward-Bias Safe Operating Area
100
40
R
60
DS(on)
Fig. 8. Transconductance
200
1
Fig. 10. Gate Charge
80
External Lead Limit
Limit
Q
G
I
- NanoCoulombs
V
D
100
DS
- Amperes
- Volts
300
120
IXFK520N075T2
IXFX520N075T2
T
J
= - 40ºC
140
10
400
25ºC
150ºC
160
180
500
DC
200
25µs
100µs
1ms
10ms
100ms
100
600
220