IXFK520N075T2 IXYS, IXFK520N075T2 Datasheet - Page 2

• Manufacturer Part Number: IXFK520N075T2
• Description: MOSFET N-CH 75V 520A TO-264
• Manufacturer: IXYS
• Series: TrenchT2™ GigaMOS™ HiPerFET™r

Specifications of IXFK520N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 520A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 545nC @ 10V
• Input Capacitance (ciss) @ Vds: 41000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 520
• Rds(on), Max, Tj=25°c, (?): 0.0022
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
GI
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. Includes lead resistance.
Gate Input Resistance
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 100A, V
= 150A, V
= 37.5V
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
DS
D
GS
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 200A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
DSS
5,237,481
5,381,025
5,486,715
Min.
65
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
4150
Typ.
1.36
0.15
105
530
545
177
135
Typ.
357
41
48
36
80
35
7
0.12 °C/W
Max.
1600
6,404,065 B1
6,534,343
6,583,505
1.25
Max.
520
150 ns
°C/W
nC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
Terminals: 1 - Gate
25.91
19.81
20.32
20.80
15.75
19.81
TM
IXFK520N075T2
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
IXFX520N075T2
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.46 BSC
Millimeter
5.45 BSC
(IXFX) Outline
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Max.
21.34
16.13
20.32
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190