BSH108,215 NXP Semiconductors, BSH108,215 Datasheet - Page 4

• Manufacturer Part Number: BSH108,215
• Description: MOSFET N-CH 30V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH108,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055571215::BSH108 T/R::BSH108 T/R

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07652
Product specification
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
th(j-a)
Mounted on a metal clad substrate.
thermal resistance from junction to solder point mounted on a metal clad substrate;
thermal resistance from junction to ambient
Thermal characteristics
7.1 Transient thermal impedance
Z th(j-sp)
(K/W)
Rev. 02 — 25 October 2000
Conditions
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
P
t p
T
=
t p
T
t
Figure 4
03aa79
© Philips Electronics N.V. 2000. All rights reserved.
BSH108
Value Unit
150
350
4 of 13
K/W
K/W