BSH108,215 NXP Semiconductors, BSH108,215 Datasheet

MOSFET N-CH 30V 1.9A SOT23

BSH108,215

Manufacturer Part Number
BSH108,215
Description
MOSFET N-CH 30V 1.9A SOT23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BSH108215.pdf (13 pages)

Specifications of BSH108,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
830mW
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10nC @ 10V
Vgs(th) (max) @ Id
2V @ 1mA
Current - Continuous Drain (id) @ 25° C
1.9A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055571215::BSH108 T/R::BSH108 T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
c
M3D088
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
BSH108 in SOT23.
BSH108
N-channel enhancement mode field-effect transistor
Rev. 02 — 25 October 2000
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
Battery management
High speed switch
Low power DC to DC converter.
1
technology.
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
MBB076
Product specification
g
d
s

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BSH108,215 Summary of contents

Page 1

BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH108 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point mounted on a metal clad substrate; th(j-sp) R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Z th(j-sp) ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors 3 4 2.5 2 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 ...

Page 7

Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature. 8 ...

Page 8

Philips Semiconductors 4.5 (A) 4 3.5 150 2.5 2 1 0.2 0.4 0.6 0 and 150 ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 02 20001025 - Product specification; second version; supersedes Rev.01 of 20000906. Correction to diode I 01 20000906 - Product specification. 9397 750 07652 Product specification N-channel enhancement ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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