BSH114,215 NXP Semiconductors, BSH114,215 Datasheet - Page 10

• Manufacturer Part Number: BSH114,215
• Description: MOSFET N-CH 100V 850MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH114,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 4.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 138pF @ 25V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056506215; BSH114 T/R; BSH114 T/R

10. Revision history
Table 6:
Philips Semiconductors
9397 750 07708
Product specification
Rev Date
01
20001109
Revision history
CPCN
-
Description
Product specification; initial version
Rev. 01 — 09 November 2000
N-channel enhancement mode field effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
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