BSH114,215 NXP Semiconductors, BSH114,215 Datasheet

MOSFET N-CH 100V 850MA SOT-23

BSH114,215

Manufacturer Part Number
BSH114,215
Description
MOSFET N-CH 100V 850MA SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BSH114215.pdf (13 pages)

Specifications of BSH114,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
850mA
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
4.6nC @ 10V
Input Capacitance (ciss) @ Vds
138pF @ 25V
Power - Max
830mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.85 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056506215
BSH114 T/R
BSH114 T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
c
M3D088
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
BSH114 in SOT23.
BSH114
N-channel enhancement mode field effect transistor
Rev. 01 — 09 November 2000
TrenchMOS™ technology
Low on-state resistance
Very fast switching
Surface mount package.
Relay driver
DC to DC converter
General purpose switch.
1
technology.
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
MBB076
Product specification
g
d
s

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BSH114,215 Summary of contents

Page 1

BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH114 in SOT23. 2. Features TrenchMOS™ technology Low on-state resistance Very ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point mounted on a metal clad substrate; th(j-sp) R thermal resistance from junction to ambient th(j-amb) 7.1 Transient thermal impedance 10 3 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors º ( 0 Fig 5. Output characteristics: drain current as a function of drain-source ...

Page 7

Philips Semiconductors 5 4.5 V GS(th) 4 (V) 3.5 3 2.5 2 1.5 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction ...

Page 8

Philips Semiconductors ( =150 º 0 and 150 Fig 13. Source (diode forward) current as ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20001109 - Product specification; initial version 9397 750 07708 Product specification N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 BSH114 © Philips ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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