STP32N65M5 STMicroelectronics, STP32N65M5 Datasheet - Page 5

MOSFET N-CH 650V 24A TO-220

STP32N65M5

Manufacturer Part Number
STP32N65M5
Description
MOSFET N-CH 650V 24A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP32N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
119 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
3320pF @ 100V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
710V
On Resistance Rds(on)
0.095ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
119 mOhms
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
24 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
72 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10079-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP32N65M5
Manufacturer:
ST
Quantity:
25 000
Part Number:
STP32N65M5
Manufacturer:
ST
0
STB/F/I/P/W32N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15316 Rev 3
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 24 A, V
= 24 A, di/dt = 100 A/µs
= 24 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 60 V (see
= 60 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
21)
21)
GS
j
D
GS
= 150 °C
= 14 A,
= 0
Figure
= 10 V
21)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
375
440
33
36
53
12
56
16
6
8
Max. Unit
Max
1.5
24
96
-
Unit
nC
nC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A

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