STP32N65M5 STMicroelectronics, STP32N65M5 Datasheet - Page 17

• Manufacturer Part Number: STP32N65M5
• Description: MOSFET N-CH 650V 24A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP32N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 119 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 3320pF @ 100V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 710V
• On Resistance Rds(on): 0.095ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 119 mOhms
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 24 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 72 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10079-5

STB/F/I/P/W32N65M5
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Revision history
Table 8.
01-Sep-2009
30-Sep-2009
16-Jan-2009
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Document status promoted from preliminary data to datasheet.
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Doc ID 15316 Rev 3
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