IRF1010EZSPBF International Rectifier, IRF1010EZSPBF Datasheet - Page 4

• Manufacturer Part Number: IRF1010EZSPBF
• Description: MOSFET N-CH 60V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010EZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 2810pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1010EZSPBF

1000.00
100.00
100000
4
10.00
10000
1.00
0.10
1000
100
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
T J = 175°C
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
T J = 25°C
f = 1 MHZ
10
C iss
C rss
C oss
V GS = 0V
100
10000
1000
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
1
0
Fig 6. Typical Gate Charge vs.
I D = 51A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
V DS = 48V
V DS = 30V
V DS = 12V
30
10
10msec
100µsec
1msec
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40
50
100
60