IRF1010EZSPBF International Rectifier, IRF1010EZSPBF Datasheet - Page 3

MOSFET N-CH 60V 75A D2PAK

IRF1010EZSPBF

Manufacturer Part Number
IRF1010EZSPBF
Description
MOSFET N-CH 60V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1010EZSPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 51A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2810pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EZSPBF
www.irf.com
10000
1000
1000
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
4
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
6
4.5V
V DS = 25V
60µs PULSE WIDTH
7
20µs PULSE WIDTH
Tj = 25°C
10
8
9
100
10
1000
100
Fig 4. Typical Forward Transconductance
100
0.1
Fig 2. Typical Output Characteristics
10
90
80
70
60
50
40
30
20
10
1
0
0.01
0
TOP
BOTTOM
20
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
40
T J = 175°C
60
T J = 25°C
1
80
20µs PULSE WIDTH
Tj = 175°C
4.5V
100
10
120
3
100
140

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