IRF630 STMicroelectronics, IRF630 Datasheet - Page 9

• Manufacturer Part Number: IRF630
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r
• Type: Power MOSFETr

Specifications of IRF630

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 9A
• Power Dissipation: 75W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Application: High current switching, uninterruptible power supply (UPS), DC-AC converters for telecom, industrial and lighting equipment
• Channel Type: N-Channel
• Current, Drain: 9 A
• Fall Time: 12 ns (Typ.)
• Gate Charge, Total: 31 nC
• Mounting And Package Type: TO-220 Package
• Operating And Storage Temperature: -65 to +150 °C
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.35 Ohm
• Resistance, Thermal, Junction To Case: 1.67 °C⁄W (Max.)
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -65 °C
• Thermal Resistance, Junction To Ambient: 62.5 °C⁄W
• Time, Rise: 15 ns (Typ.)
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 4 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Gate: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2757-5

IRF630 - IRF630FP
3
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
Figure 19. Switching time waveform
circuit
Test circuit
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