IRF630 STMicroelectronics, IRF630 Datasheet - Page 4

• Manufacturer Part Number: IRF630
• Description: MOSFET N-CH 200V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r
• Type: Power MOSFETr

Specifications of IRF630

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 9A
• Power Dissipation: 75W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Application: High current switching, uninterruptible power supply (UPS), DC-AC converters for telecom, industrial and lighting equipment
• Channel Type: N-Channel
• Current, Drain: 9 A
• Fall Time: 12 ns (Typ.)
• Gate Charge, Total: 31 nC
• Mounting And Package Type: TO-220 Package
• Operating And Storage Temperature: -65 to +150 °C
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.35 Ohm
• Resistance, Thermal, Junction To Case: 1.67 °C⁄W (Max.)
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -65 °C
• Thermal Resistance, Junction To Ambient: 62.5 °C⁄W
• Time, Rise: 15 ns (Typ.)
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 4 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Gate: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2757-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
C
I
I
DS(on)
C
C
GS(th)
d(on)
Q
Q
DSS
GSS
fs
Q
oss
t
rss
iss
gs
gd
r
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on Delay Time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
I
V
V
R
(see Figure 14)
V
V
I
V
V
V
V
V
D
D
GS
DS
DS
DD
DD
G
DS
DS
GS
DS
GS
= 4.5A
= 250 µA, V
= 4.7Ω, V
=160V, I
= V
= 10V, I
> I
=25V, f=1 MHz, V
=10V
= 100V, I
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
D(on)
GS
, I
D
D
x R
D
= 4.5A
D
GS
= 250µA
= 9A
GS
= 4.5A,
DS(on)max,
= 10V
= 0
GS
=0
Min.
200
2
Min. Typ. Max.
3
Typ.
0.35
IRF630 - IRF630FP
3
540
7.5
90
35
10
15
31
4
9
±
Max.
0.40
50
100
700
120
1
4
50
14
20
45
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V
Ω
ns
ns
S