BSN20,215 NXP Semiconductors, BSN20,215 Datasheet - Page 6

• Manufacturer Part Number: BSN20,215
• Description: MOSFET N-CH 50V 173MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSN20,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 173mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 15Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 173mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-1658-2; 934012500215; BSN20 T/R

Philips Semiconductors
9397 750 07213
Product specification
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
R DSon
(A)
I D
( )
10
9
8
7
6
5
4
3
2
1
0
0
3.5V
0.1
4 V
0.2
4.5 V
0.3
0.4
0.5
V GS = 10V
T j = 25 o C
I D (A)
0.6
03aa52
03aa51
0.7
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
j
=
= 25 C and 150 C; V
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
(A)
I D
a
DSon 25 C
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
R
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2
1
0
DSon
-60
0
0
V DS > I D X R DSon
1
-20
2
20
3
T j = 25 o C
DS
T j (
4
60
o
I
C)
D
5
© Philips Electronics N.V. 2000. All rights reserved.
R
6
100
DSon
7
150 o C
140
8
V GS (V)
03aa53
03aa28
BSN20
9
180
10
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