BSN20,215 NXP Semiconductors, BSN20,215 Datasheet

BSN20,215

Manufacturer Part Number

BSN20,215

Description

MOSFET N-CH 50V 173MA SOT-23

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Type

Power MOSFETr

Datasheet

1.BSN20215.pdf (13 pages)

Specifications of BSN20,215

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

15 Ohm @ 100mA, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

173mA

Vgs(th) (max) @ Id

1V @ 1mA

Input Capacitance (ciss) @ Vds

25pF @ 10V

Power - Max

830mW

Mounting Type

Surface Mount

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

15 Ohm @ 10 V

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.173 A

Power Dissipation

830 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

15Ohm

Drain-source On-volt

50V

Gate-source Voltage (max)

±20V

Drain Current (max)

173mA

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

TO-236AB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Compliant

Other names

568-1658-2
934012500215
BSN20 T/R

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

BSN20,215

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSN20,215

Manufacturer:

NEXPERIA/安世

Quantity:

20 000

Current page: 1 of 13
Download datasheet (317Kb)

1. Description

2. Features

3. Applications

4. Pinning information

Table 1:

TrenchMOS is a trademark of Royal Philips Electronics.

Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

source (s)

drain (d)

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

Product availability:

BSN20 in SOT23.

BSN20

N-channel enhancement mode ﬁeld-effect transistor

Rev. 03 — 26 June 2000

TrenchMOS™ technology

Very fast switching

Logic level compatible

Subminiature surface mount package.

Relay driver

High speed line driver

Logic level translator.

technology.

Simpliﬁed outline

SOT23

03ab44

Symbol

N-channel MOSFET

Product speciﬁcation

03ab30

Related parts for BSN20,215

BSN20,215 Summary of contents

Page 1

BSN20 N-channel enhancement mode ﬁeld-effect transistor Rev. 03 — 26 June 2000 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ Product availability: BSN20 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P 100 der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder th(j-sp) point R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise speciﬁed j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values DSon 3. ...

Page 7

Philips Semiconductors 2 V GS(th) 1.8 (V) 1.6 1.4 1.2 1 typ 0.8 0.6 min 0.4 0.2 0 - Fig 9. Gate-source threshold voltage as a function ...

Page 8

Philips Semiconductors T Fig 13. Source (diode forward) current as a function of source-drain (diode forward) 9397 750 07213 Product speciﬁcation N-channel enhancement mode ﬁeld-effect transistor and 150 ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000626 HZG303 Product speciﬁcation; third version; supersedes BSN20_2 of 970618. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970618 - Product speciﬁcation; second version. ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Deﬁnition Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for product development. Speciﬁcation may change in any manner without notice. Preliminary speciﬁcation Qualiﬁcation This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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