UPA2757GR-E2-AT Renesas Electronics America, UPA2757GR-E2-AT Datasheet - Page 7

• Manufacturer Part Number: UPA2757GR-E2-AT
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2757GR-E2-AT

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
2.5
1.5
0.5
25
20
15
10
80
60
40
20
5
0
0
2
1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-50
0
1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DS
= 1 mA
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
= 10 V
T
GS
DS
ch
= 10 V
- Drain to Source Voltage - V
- Channel Temperature - ° C
0
I
D
0.5
- Drain Current - A
V
10
4.5 V
50
GS
= 4.5 V
10 V
1
100
Pulsed
Pulsed
Data Sheet G18206EJ2V0DS
100
150
1.5
0.0001
0.001
0.001
0.01
0.01
100
100
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
60
40
20
10
10
0
1
1
100
0
FORWARD TRANSFER CHARACTERISTICS
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
μ
T
DS
A
= 150°C
= 10 V
V
V
−25°C
1 m
GS
75°C
25°C
GS
5
- Gate to Source Voltage - V
1
- Gate to Source Voltage - V
I
D
T
- Drain Current - A
10 m
A
= 150°C
−25°C
10
25°C
75°C
2
100 m
μ
PA2757GR
I
Pulsed
15
D
V
Pulsed
3
= 3.0 A
DS
1
= 10 V
20
10
4
5