UPA2757GR-E2-AT Renesas Electronics America, UPA2757GR-E2-AT Datasheet - Page 4

• Manufacturer Part Number: UPA2757GR-E2-AT
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2757GR-E2-AT

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<R>
<R>
<R>
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
2
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Drain to Source Voltage (V
2. Mounted on ceramic substrate of 2000 mm
3. Starting T
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note3
Note3
DS
GS
= 0 V)
= 0 V)
Note2
Note2
DD
Note2
= 15 V, R
A
= 25°C)
G
= 25 Ω, V
Data Sheet G18206EJ2V0DS
V
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AS
2
ch
stg
DSS
GSS
T1
T2
AS
× 1.6 mmt
GS
= 20 → 0 V
−55 to +150
±5.0
±20
±20
150
1.7
2.0
2.5
30
5
mJ
°C
°C
W
W
V
V
A
A
A
μ
PA2757GR