NTHD3100CT1G ON Semiconductor, NTHD3100CT1G Datasheet - Page 4

• Manufacturer Part Number: NTHD3100CT1G
• Description: MOSFET N/P-CH 20V 2.9A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3100CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 165pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6 S, 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 2.9 A @ N Channel or 3.2 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3100CT1GOSTR

0.15
0.05
0.1
8
6
4
2
0
0
1.5
1.3
0.9
1.7
1.1
0.7
0
0
Figure 3. On−Resistance vs. Gate−to−Source
−50
V
I
V
1
D
V
DS
GS
Figure 1. On−Region Characteristics
GS
= 2.9 A
2.2 V
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
1
= 4.5 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
V
V
GS
GS
T
J
, JUNCTION TEMPERATURE (°C)
= 5 V to 3 V
= 2.4 V
3
0
2
4
Voltage
25
Temperature
5
3
TYPICAL N−CHANNEL PERFORMANCE CURVES
50
6
1.8 V
1.4 V
1.6 V
2 V
75
4
7
(T
T
I
T
100
D
J
8
J
J
= 2.9 A
= 25°C
= 25°C
= 25°C unless otherwise noted)
5
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9
125
10
6
150
4
0.07
0.04
100
0.1
10
1
8
6
4
2
0
2
Figure 4. On−Resistance vs. Drain Current and
1
0
V
GS
Figure 6. Drain−to−Source Leakage Current
V
T
V
V
4
DS
J
= 0 V
DS
GS
= 25°C
0.5
≥ 10 V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
6
D,
DRAIN CURRENT (AMPS)
25°C
3
1
8
T
Gate Voltage
C
V
V
= −55°C
GS
T
vs. Voltage
GS
10
J
= 100°C
= 4.5 V
= 2.5 V
1.5
12
100°C
5
14
2
16
2.5
7
18
20
3