NTGD4167CT1G ON Semiconductor, NTGD4167CT1G Datasheet - Page 8

• Manufacturer Part Number: NTGD4167CT1G
• Description: MOSFET N/P-CH 30V DUAL 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGD4167CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 295pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
0.1
10
40
30
20
10
0.001
0
0.4
Figure 20. Diode Forward Voltage versus
Figure 22. Single Pulse Maximum Power
0.5
−V
0.01
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.6
T
SINGLE PULSE TIME (s)
J
= 150°C
0.1
0.7
Dissipation
Current
1
0.8
5
4
3
2
1
0
0
T
Drain−to−Source Voltage versus Total Charge
J
= 25°C
0.9
Q
10
GS
Figure 19. Gate−to−Source and
1.0
Q
G
1
100
, TOTAL GATE CHARGE (nC)
−V
1.1
http://onsemi.com
Q
DS
GD
1000
1.2
Q
T
2
8
0.01
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1
10
−50
1
−V
0.1
GS
V
Single Pulse
T
I
T
V
Figure 23. Maximum Rated Forward Biased
D
A
GS
3
J
DS
−25
= −2.0 A
= 25°C
= 25°C
= −12 V
= −15 V
−V
R
Thermal Limit
Package Limit
DS(on)
DS
T
J
Figure 21. Threshold Voltage
0
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
Limit
Safe Operating Area
4
1
25
16
14
12
10
8
6
4
2
0
50
75
10
100
I
D
= −250 mA
125
1 ms
dc
100 ms
10 ms
150
100