NTGD4167CT1G ON Semiconductor, NTGD4167CT1G Datasheet

MOSFET N/P-CH 30V DUAL 6-TSOP

NTGD4167CT1G

Manufacturer Part Number
NTGD4167CT1G
Description
MOSFET N/P-CH 30V DUAL 6-TSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTGD4167CT1G

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.6A, 1.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
295pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Dual
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.2 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTGD4167CT1G
Manufacturer:
ON Semiconductor
Quantity:
4 800
Part Number:
NTGD4167CT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTGD4167CT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTGD4167CT1G
0
Company:
Part Number:
NTGD4167CT1G
Quantity:
200
Company:
Part Number:
NTGD4167CT1G
Quantity:
15 000
NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/−2.2 A,
TSOP−6 Dual
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 1
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain
Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t ≤ 5 s (Note 1)
Complementary N−Channel and P−Channel MOSFET
Small Size (3 x 3 mm) Dual TSOP−6 Package
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
DC−DC Conversion Circuits
Load/Power Switching with Level Shift
[1 oz] including traces).
Parameter
Parameter
Steady State
Steady
Steady
t ≤ 5 s
t ≤ 5 s
t ≤ 5 s
N−Ch
P−Ch
State
State
(T
J
= 25°C unless otherwise noted)
(N−Ch & P−Ch)
T
T
T
T
T
T
T
t
p
A
A
A
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
T
Symbol
Symbol
J
V
R
R
V
, T
I
P
T
DSS
DM
I
I
I
qJA
qJA
GS
D
D
S
D
L
STG
−55 to
Value
Value
−1.9
−1.4
−2.2
−6.3
±0.9
150
260
140
±12
110
2.6
1.9
2.9
0.9
1.1
8.6
30
1
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
G1
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
V
N−CHANNEL MOSFET
(BR)DSS
N−Ch
P−Ch
−30 V
30 V
CASE 318G
STYLE 13
(Note: Microdot may be in either location)
TSOP−6
G1
G2
S2
ORDERING INFORMATION
1
TA = Specific Device Code
M
G
D1
1
2
3
170 mW @ −4.5 V
300 mW @ −2.5 V
125 mW @ 2.5 V
http://onsemi.com
90 mW @ 4.5 V
PIN CONNECTION
= Date Code
= Pb−Free Package
R
S1
DS(on)
(Top View)
MAX
Publication Order Number:
G2
P−CHANNEL MOSFET
I
1
D
MARKING
DIAGRAM
NTGD4167C/D
6
5
4
MAX (Note 1)
D2
TA MG
−1.9 A
−1.0 A
2.6 A
2.2 A
D1
S1
D2
G
S2

Related parts for NTGD4167CT1G

NTGD4167CT1G Summary of contents

Page 1

NTGD4167C Power MOSFET Complementary +2.9/−2.2 A, TSOP−6 Dual Features • Complementary N−Channel and P−Channel MOSFET • Small Size ( mm) Dual TSOP−6 Package • Leading Edge Trench Technology for Low On Resistance • Reduced Gate Charge ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output ...

Page 3

Switching characteristics are independent of operating junction temperatures. ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge (T = ...

Page 4

N−CHANNEL TYPICAL CHARACTERISTICS 9 4 8.0 3.5 V 2.5 V 7.0 6.0 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 3 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.20 ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1 250 mA ...

Page 6

Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 0 TIME (s) Figure 12. FET Thermal Response http://onsemi.com 6 10 100 1000 ...

Page 7

P−CHANNEL TYPICAL CHARACTERISTICS 7 −5 −3.5 V 6.0 GS 5.0 −3.0 V −2.5 V 4.0 3.0 2.0 −2.0 V 1.0 −1 0.5 1.0 1.5 2.0 2.5 3.0 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS ...

Page 8

Drain−to−Source Voltage versus Total Charge 150° 25°C J 1.0 0.1 0.4 0.5 0.6 0.7 0.8 0.9 −V , SOURCE−TO−DRAIN VOLTAGE (V) SD Figure 20. Diode ...

Page 9

... Single Pulse 0.01 0.0001 0.001 ORDERING INFORMATION Device NTGD4167CT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.01 0 TIME (s) Figure 24. FET Thermal Response Package TSOP6 (Pb− ...

Page 10

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords