NTZD3155CT2G ON Semiconductor, NTZD3155CT2G Datasheet - Page 6

• Manufacturer Part Number: NTZD3155CT2G
• Description: MOSFET N/P-CH COMPL 20V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3155CT2G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.75
0.65
0.55
0.45
0.8
0.6
0.4
0.2
0.8
0.7
0.6
0.5
0.4
1
0
1.6
1.4
1.2
0.8
0.6
0
1
1
-50
Figure 3. On-Resistance vs. Gate-to-Source
1
I
V
D
GS
Figure 1. On-Region Characteristics
-V
= -0.43 A
-25
-V
Figure 5. On-Resistance Variation with
DS
= -4.5 V
2
V
GS
P-CHANNEL TYPICAL PERFORMANCE CURVES
V
2
, DRAIN-TO-SOURCE VOLTAGE (V)
GS
GS
, GATE-T O-SOURCE VOLTAGE (V)
T
J
= -1.8 V
, JUNCTION TEMPERATURE (°C)
3
= -2 V
0
4
3
25
Voltage
Temperature
5
50
T
-1.6 V
-1.4 V
-1.2 V
6
J
-1 V
4
= 25°C
75
7
I
T
D
J
100
8
= -0.43 A
= 25°C
5
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9
125
NTZD3155C
10
6
150
6
10000
1000
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.8
0.6
0.4
0.2
10
1
0
0.1
Figure 4. On-Resistance vs. Drain Current and
2
0
T
V
Figure 6. Drain-to-Source Leakage Current
V
J
GS
DS
= 25°C
0.2
(T
4
= 0 V
≥ -10 V
J
-V
-V
= 25°C unless otherwise noted)
Figure 2. Transfer Characteristics
0.5
DS
GS
0.3
6
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-T O-SOURCE VOLTAGE (V)
-I
25°C
T
D,
J
0.4
= -55°C
DRAIN CURRENT (A)
8
V
V
Gate Voltage
GS
GS
vs. Voltage
1
T
T
0.5
10
= -1.8 V
= -2.5 V
J
J
= 150°C
= 100°C
100°C
0.6
12
1.5
0.7
14
16
0.8
2
0.9
18
1.0
2.5
20