NTZD3155CT2G ON Semiconductor, NTZD3155CT2G Datasheet - Page 2

• Manufacturer Part Number: NTZD3155CT2G
• Description: MOSFET N/P-CH COMPL 20V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3155CT2G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Resistance Ratings
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
3. Pulse Test: pulse width v300 ms, duty cycle v2%
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t = 5 s (Note 2)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Gate Threshold
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Temperature Coefficient
Temperature Coefficient
Parameter
Parameter
V(
V
(T
V
Symbol
V
GS(TH)
BR)DSS
R
J
(BR)DSS
C
C
C
C
GS(TH)
I
I
C
C
DS(on)
g
DSS
GSS
= 25°C unless otherwise specified)
OSS
RSS
OSS
RSS
FS
ISS
ISS
/T
/T
J
J
N/P
N
P
N
P
N
P
P
N
N
P
N
P
N
P
N
P
N
P
N
P
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NTZD3155C
V
V
V
V
GS
GS
GS
GS
2
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
V
V
V
V
V
V
V
V
V
V
GS
V
GS
GS
GS
DS
GS
GS
GS
GS
DS
DS
f = 1 MHz, V
f = 1 MHz, V
= -4.5V , I
= -2.5V , I
= -1.8V , I
= -10 V, I
= V
= 0 V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
Symbol
Test Condition
= 10 V, I
= 0 V, V
DS
DS
DS
DS
V
R
V
DS
DS
qJA
= -16 V
= - 16V
DS
= 16 V
= 16 V
= -16 V
= 16 V
GS
D
D
D
D
D
D
D
D
GS
GS
= 540 mA
= 540 mA
= -430 mA
= -430 mA
= -300 mA
= -150 mA
= 500 mA
= 350 mA
= ±4.5 V
= 0 V
= 0 V
I
I
I
D
I
D
T
D
D
T
J
= -250 mA
= -250 mA
J
= 250 mA
= 250 mA
= 125°C
= 25°C
Max
500
447
-0.45
0.45
Min
-20
20
-1.9
Typ
105
0.4
0.5
0.5
0.6
0.7
1.0
1.0
1.0
18
80
13
10
15
10
$2.0
$5.0
Max
-1.0
-5.0
-1.0
0.55
150
175
1.0
2.0
1.0
0.9
0.7
1.2
0.9
2.0
25
20
30
20
°C/W
Unit
-mV/ °C
mV/°C
Unit
mA
mA
mA
pF
W
V
V
S