IRF7101PBF International Rectifier, IRF7101PBF Datasheet - Page 6

MOSFET N-CH 20V 3.5A 8-SOIC

IRF7101PBF

Manufacturer Part Number
IRF7101PBF
Description
MOSFET N-CH 20V 3.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7101PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
320pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N
Current, Drain
3.5 A
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
0.1 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Voltage, Breakdown, Drain To Source
20 V
Voltage, Gate To Source
±12 V
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
3.5A
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7101PBF
Quantity:
100
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
50KΩ
3mA
Current Sampling Resistors
≤ 0.1 %
≤ 1
.3µF
I
G
D.U.T.
I
D
+
-
V
DS
+
-
V
90%
10%
V
DS
GS
V
G
t
d(on)
Q
GS
t
r
Q
Charge
Q
GD
G
t
d(off)
t
f

Related parts for IRF7101PBF