IRF7101PBF International Rectifier, IRF7101PBF Datasheet

IRF7101PBF

Manufacturer Part Number

IRF7101PBF

Description

MOSFET N-CH 20V 3.5A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF7101TRPBF.pdf (9 pages)

2.IRF7101PBF.pdf (9 pages)

Specifications of IRF7101PBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

100 mOhm @ 1.8A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

3.5A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

15nC @ 10V

Input Capacitance (ciss) @ Vds

320pF @ 15V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Channel Type

Current, Drain

3.5 A

Package Type

SO-8

Polarization

N-Channel

Power Dissipation

2 W

Resistance, Drain To Source On

0.1 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Voltage, Breakdown, Drain To Source

20 V

Voltage, Gate To Source

±12 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.1Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±12V

Continuous Drain Current

3.5A

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Module Configuration

Dual

Transistor Polarity

N Channel

Continuous Drain Current Id

3.5A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

100mohm

Rds(on) Test Voltage Vgs

10V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

IRF7101PBF

Quantity:

100

Current page: 1 of 9
Download datasheet (264Kb)

Thermal Resistance Ratings

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications.

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

Description

Absolute Maximum Ratings

dv/dt

@ T

Adavanced Process Technology

Ultra Low On-Resistance

Dual N-Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

STG

= 25°C

= 100°C

= 25°C

With these improvements, multiple

Maximum Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Sodering Temperature, for 10 seconds

Parameter

@ 10V

G 2

G 1

S 2

S 1

Top View

Min.

–––

300(1.6mm from case)

HEXFET

-55 to + 150

Max.

0.016

D 1

D 2

± 12

3.5

2.3

2.0

3.0

Typ.

S O -8

–––

IRF7101

Power MOSFET

DS(on)

DSS

PD - 9.871B

= 3.5A

Max

62.5

= 20V

= 0.10

°C/W

Units

W/°C

V/nS

°C

8/25/97

Related parts for IRF7101PBF

IRF7101PBF Summary of contents

Page 1

Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon ...

Page 2

IRF7101 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7101PBF International Rectifier, IRF7101PBF Datasheet

IRF7101PBF

Specifications of IRF7101PBF

Available stocks

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IRF7101PBF Summary of contents

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