SI1016X-T1-E3 Vishay, SI1016X-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1016X-T1-E3
• Description: MOSFET N/P-CH COMPL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1016X-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA, 370mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 700mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1016X-T1-E3TR

Si1016X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain
Current
On State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
b
a
a
a
a
J
Symbol
R
V
= 25 °C, unless otherwise noted)
I
I
I
DS(on)
t
GS(th)
D(on)
V
Q
Q
GSS
DSS
t
Q
OFF
g
ON
SD
fs
gs
gd
g
V
I
D
DS
I
V
D
 - 200 mA, V
V
DS
V
 200 mA, V
= - 10 V, V
DS
DS
= 10 V, V
V
V
V
V
= - 16 V, V
V
V
V
V
V
V
GS
GS
GS
I
= 16 V, V
V
V
V
V
DS
I
S
V
DS
V
DS
DS
V
GS
GS
GS
S
DS
DD
DS
DS
= - 150 mA, V
DS
DD
DS
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= 150 mA, V
= - 10 V, I
= - 5 V, V
= V
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 10 V, I
= V
= - 16 V, V
= - 10 V, R
= 5 V, V
= 16 V, V
= 10 V, R
GS
N-Channel
N-Channel
P-Channel
P-Channel
GS
GS
GEN
GEN
GS,
Test Conditions
GS
= - 4.5 V, I
GS
, I
= 4.5 V, I
I
D
GS
= 0 V, T
D
D
D
= 4.5 V, R
= - 4.5 V, R
= 0 V, T
D
D
D
D
D
D
GS
GS
= - 250 µA
= - 250 mA
= 400 mA
= 250 µA
GS
= 600 mA
= - 350 mA
= 500 mA
= - 300 mA
= 350 mA
= - 150 mA
L
= ± 4.5 V
GS
GS
L
GS
= 4.5 V
= - 4.5 V
= 47 
= 47 
= 0 V
= 0 V
= 0 V
= 0 V
D
D
J
J
= 250 mA
= 85 °C
= - 250 mA
= 85 °C
g
g
= 10 
= 10 
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 0.45
- 700
Min.
0.45
700
± 0.5
± 1.0
1500
Typ.
- 0.3
0.41
0.80
0.53
1.20
0.70
1.80
- 0.8
750
150
225
450
0.3
1.0
0.4
0.8
75
25
35
S10-2432-Rev. E, 25-Oct-10
5
5
Document Number: 71168
- 100
Max.
± 1.0
± 2.0
- 1.2
0.70
0.85
1.25
100
1.2
1.6
2.7
1.2
- 1
- 5
1
5
Unit
mA
µA
nA
µA
pC
ns

V
S
V