SI1016X Vishay Siliconix, SI1016X Datasheet

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SI1016X

Manufacturer Part Number
SI1016X
Description
Complementary N and P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
Document Number: 71168
S-03104—Rev. A, 08-Feb-01
D Very Small Footprint
D High-Side Switching
D Low On-Resistance:
D Low Threshold: "0.8 V (typ)
D Fast Swtiching Speed: 14 ns
D 1.8-V Operation
D Gate-Source ESD Protection
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
N-Channel
P-Channel
N-Channel, 0.7 W
P-Channel, 1.2 W
Complementary N- and P-Channel 20-V (D-S) MOSFET
b
Parameter
V
DS
J
a
–20
20
= 150_C)
(V)
_
a
a
S
T
T
T
T
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
G
D
A
A
A
A
1
1
2
0.70 @ V
0.85 @ V
1.25 @ V
1.2 @ V
1.6 @ V
2.7 @ V
= 25_C
= 85_C
= 25_C
= 85_C
r
DS(on)
1
2
3
GS
GS
GS
GS
GS
GS
= –4.5 V
= –2.5 V
= –1.8 V
SOT-563
Top View
Symbol
(W)
= 4.5 V
= 2.5 V
= 1.8 V
SC-89
T
J
ESD
V
V
I
P
, T
DM
I
I
New Product
DS
GS
D
S
D
_
stg
6
5
4
5 secs
515
370
450
280
145
D
G
S
1
2
2
N-Channel
I
D
–400
–300
–150
(mA)
600
500
350
650
20
Steady State
D Replace Digital Transistor, Level-Shifter
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
485
350
380
250
130
Marking Code: A
–55 to 150
2000
"6
5 secs
–390
–280
–450
280
145
P-Channel
Vishay Siliconix
–650
–20
Steady State
–370
–265
–380
250
130
Si1016X
www.vishay.com
Unit
mW
mA
_C
V
V
1

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SI1016X Summary of contents

Page 1

... T = 25_C 280 145 T = 85_C stg ESD Si1016X Vishay Siliconix D Replace Digital Transistor, Level-Shifter D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers Marking Code: A P-Channel Steady State 5 secs Steady State –20 "6 485 –390 –370 350 – ...

Page 2

... Si1016X Vishay Siliconix _ Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Turn-Off Time Notes Pulse test; pulse width v 300 ms, duty cycle v 2%. ...

Page 3

... V 0 2.5 3.0 100 2 4 800 1000 1.60 1.40 1.20 1.00 0.80 0.60 0.6 0.8 Si1016X Vishay Siliconix Transfer Characteristics T = –55_C C 25_C 125_C 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance MHz C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si1016X Vishay Siliconix Source-Drain Diode Forward Voltage 1000 T = 125_C J 100 T = 25_C 50_C 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage Variance vs. Temperature 0 0.1 –0.0 –0.1 –0.2 –0.3 –50 – – Temperature (_C) J www.vishay.com 4 New Product _ 1.0 1.2 1.4 3.0 2.5 2.0 1.5 1.0 0.5 0.0 75 100 ...

Page 5

... Q – Total Gate Charge (nC) g Document Number: 71168 S-03104—Rev. A, 08-Feb-01 New Product _ 2 1.8 V 2 800 1000 1.2 1.4 1.6 Si1016X Vishay Siliconix Transfer Characteristics 1000 T = –55_C J 25_C 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance 120 MHz ...

Page 6

... Si1016X Vishay Siliconix Source-Drain Diode Forward Voltage 1000 T = 125_C J 100 T = 25_C 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage Variance vs. Temperature 0 0.1 –0.0 –0.1 –0.2 –0.3 –50 – – Temperature (_C) J www.vishay.com 6 New Product _ = –55_C J 1.0 1.2 1.4 75 100 125 BV vs ...

Page 7

... Single Pulse 0.01 –4 – Document Number: 71168 S-03104—Rev. A, 08-Feb-01 New Product _ –2 – Square Wave Pulse Duration (sec) Si1016X Vishay Siliconix Notes Duty Cycle Per Unit Base = R =500_C/W thJA ( – ...

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