SI1023X-T1-GE3 Vishay, SI1023X-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI1023X-T1-GE3
• Description: MOSFET DL P-CH 20V 370MA SC89-6
• Manufacturer: Vishay

Specifications of SI1023X-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 370mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -350mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: 6V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1023X-T1-GE3TR

TYPICAL CHARACTERISTICS (T
Document Number: 71169
S10-2432-Rev. C, 25-Oct-10
1000
100
4.0
3.2
2.4
1.6
0.8
0.0
10
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
DS
0.2
Source-Drain Diode Forward Voltage
= 250 mA
0.2
= 10 V
On-Resistance vs. Drain Current
200
T
J
0.4
= 25 °C
V
SD
Q
0.4
V
T
g
-
J
GS
I
- Total Gate Charge (nC)
D
S
= 125 °C
V
0.6
- Drain Current (mA)
Gate Charge
o
= 1.8 V
GS
400
u
c r
0.6
= 2.5 V
e
t -
0.8
- o
D
0.8
a r
600
n i
T
1.0
J
V
= - 55 °C
o
V
a t l
A
1.0
GS
g
1.2
= 25 °C, unless otherwise noted)
e
= 4.5 V
(
800
) V
1.2
1.4
1000
1.6
1.4
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
5
4
3
2
1
0
- 50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
= 200 mA
V
f = 1 MHz
- 25
GS
1
= 0 V
4
V
V
T
GS
C
DS
J
oss
0
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
2
Capacitance
8
25
I
V
I
3
D
D
Vishay Siliconix
GS
= 350 mA
= 350 mA
50
= 4.5 V
12
4
75
Si1023X
V
I
www.vishay.com
D
GS
= 150 mA
16
= 1.8 V
100
5
125
20
6
3