BF246A Fairchild Semiconductor, BF246A Datasheet - Page 2

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BF246A Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Electrical Characteristics*
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2%
Off Characteristics
V
I
V
V
V
On Characteristics
*I
Small Signal Characteristics
g
Symbol
GSS
fs
(BR)GSS
GS(off)
GS(f)
GS
DSS
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cut-off Voltage
Gate-Source Forward Voltage
Gate-Source Forward Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Parameter
T
a
=25°C unless otherwise noted
I
V
V
I
V
V
V
2
G
G
GS
DS
DS
DS
DS
= 1.0μA, V
= 1.0mA
= 15V, V
= 15V, I
= 15V, I
= 15V, V
= 15V, V
Test Condition
D
D
DS
DS
GS
GS
= 100nA
= 0.2mA
= 0
= 0
= 0
= 0V
Min.
-0.6
-1.5
-30
30
8
Max.
-14.5
-5.0
-4.0
2.0
80
www.fairchildsemi.com
Units
mA
nA
/Ω
V
V
V
V