IXGH36N60B3D4 IXYS, IXGH36N60B3D4 Datasheet - Page 6

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IXGH36N60B3D4

Manufacturer Part Number
IXGH36N60B3D4
Description
IGBT 600V TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH36N60B3D4

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 30A
Current - Collector (ic) (max)
36A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.50
Rthjc, Max, Igbt, (°c/w)
0.50
If, Tj=110°c, Diode, (a)
10
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
150
135
120
105
65
60
55
50
45
40
35
30
25
20
15
10
90
75
60
45
30
15
5
0
25
0
Fig. 20. Inductive Turn-on Switching Times
Fig. 18. Inductive Turn-on Switching Times
t
T
V
r
J
CE
10
35
= 125ºC, V
= 400V
20
45
I
I
C
vs. Junction Temperature
C
30
= 30A
= 15A
T
t
d(on)
GE
J
vs. Gate Resistance
55
I
I
- Degrees Centigrade
C
= 15V
C
40
= 60A
- - - -
= 15A, 30A, 60A
R
65
G
50
- Ohms
60
75
t
R
V
r
70
CE
G
85
= 5
= 400V
80
95
, V
90
t
GE
d(on)
105
= 15V
100 110 120
- - - -
115
125
110
100
90
80
70
60
50
40
30
20
10
27
26
25
24
23
22
21
20
19
18
17
16
15
60
55
50
45
40
35
30
25
20
15
10
15
Fig. 19. Inductive Turn-on Switching Times
t
R
V
r
CE
G
= 5
20
= 400V
, V
25
t
d(on
GE
vs. Collector Current
= 15V
)
- - - -
30
I
C
- Amperes
IXGH36N60B3D4
T
35
J
= 125ºC
T
J
= 25ºC
40
45
IXYS REF: G_36N60B3(55)5-05-08-C
50
55
60
25
24
23
22
21
20
19
18
17
16
15

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