IXGH36N60B3D4 IXYS, IXGH36N60B3D4 Datasheet

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IXGH36N60B3D4

Manufacturer Part Number
IXGH36N60B3D4
Description
IGBT 600V TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH36N60B3D4

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 30A
Current - Collector (ic) (max)
36A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.50
Rthjc, Max, Igbt, (°c/w)
0.50
If, Tj=110°c, Diode, (a)
10
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
Medium speed low Vsat PT
IGBT for 5-40kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
T
T
Symbol
(T
BV
V
I
I
V
C110
F110
CM
Weight
CES
GES
© 2008 IXYS CORPORATION, All rights reserved
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
J
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
TM
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @V
T
Mounting torque
I
I
V
V
V
I
Test Conditions
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 30A, V
600V IGBT
= 250μA, V
= 250μA, V
= V
= 0V
= 0V, V
CES
J
GE
GE
= 125°C, R
= ±20V
= 15V, Note 1
GE
CE
= V
= 0V
GE
GE
G
= 1MΩ
= 5Ω
CE
T
≤ ≤ ≤ ≤ ≤ 600V
J
= 125°C
IXGH36N60B3D4
Characteristic Values
-55 ... +150
-55 ... +150
Min.
600
3.0
Maximum Ratings
I
1.13/10
CM
= 80
600
600
±20
±30
200
250
150
300
260
Typ.
36
10
1.5
6
±100
Nm/lb.in.
500
5.0
75
Max.
1.8
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
TO-247 AD (IXGH)
Features
Advantages
Applications
G = Gate
E = Emitter
C110
Optimized for low conduction and
switching losses
Square RBSOA
Anti-parallel ultra fast diode
International standard package
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
≤ ≤ ≤ ≤ ≤ 1.8V
= 600V
= 36A
C
TAB = Collector
= Collector
DS99725B(06/08)
TAB

Related parts for IXGH36N60B3D4

IXGH36N60B3D4 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 30A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGH36N60B3D4 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 200 = 5Ω ≤ ≤ ≤ ≤ ≤ 600V CE 250 -55 ... +150 150 -55 ... +150 1.13/10 300 260 6 Characteristic Values Min. ...

Page 2

... Characteristic Values Min. Typ 150°C 1 100° 25° 100°C J 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH36N60B3D4 TO-247 (IXGH) AD Outline Max 200 Gate 2 = Collector 160 Emitter 1.5 mJ Tab = Collector 0.50 °C/W °C/W Max. ...

Page 3

... T = 25ºC J 200 180 160 140 120 100 IXGH36N60B3D4 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - ...

Page 4

... C ies oes res 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH36N60B3D4 Fig. 8. Gate Charge V = 300V 30A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º Ω < 10V / ns 150 200 250 300 ...

Page 5

... IXGH36N60B3D4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V T = 125º 400V Amperes C Fig ...

Page 6

... Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 110 60 100 100 110 120 d(on) Ω 15V 400V 105 115 125 IXGH36N60B3D4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d( Ω 15V 400V 125º 25º Amperes IXYS REF: G_36N60B3(55)5-05-08-C ...

Page 7

... A F 100 100 -di /dt F Fig. 22. Reverse recovery charge 100°C VJ 100 V = 300 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t versus -di rr 0.01 0.1 t IXGH36N60B3D4 1000 0 200 400 A/μs Fig. 23. Peak reverse current 100° 800 1000 0 200 400 A/μs /dt Fig. 26. Peak forward voltage V ...

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