IXGT10N170A IXYS, IXGT10N170A Datasheet - Page 3

• Manufacturer Part Number: IXGT10N170A
• Description: IGBT NPT 1700V 10A TO-268
• Manufacturer: IXYS

Specifications of IXGT10N170A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 6V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 10
• Ic90, Tc=90°c, Igbt, (a): 5
• Vce(sat), Max, Tj=25°c, Igbt, (v): 6
• Tfi, Typ, Igbt, (ns): 190
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.6
• Rthjc, Max, Igbt, (°c/w): 1.1
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2003 IXYS All rights reserved
1 0
1 0
1 2
1 0
1 1
9
8
7
6
5
4
3
2
0
9
8
7
6
5
4
3
2
0
9
8
7
6
5
4
3
1
1
5
1
1
6
2
2
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
3
vs. Gate-to-Emiiter voltage
3
8
V
4
G E
@ 125 Deg. C
V
@ 25 Deg. C
4
V
V
V
= 1 7V
G E
9
1 5V
1 3V
1 1 V
CE
GE
CE
5
= 1 7V
1 5V
1 3V
1 1 V
- Volts
- Volts
- Volts
1 0
5
I
6
C
= 1 0A
1 1
6
5A
2.5A
T
7
J
1 2
= 25
7
8
º
1 3
9V
7V
C
7V
9V
8
9
1 4
1 0
1 5
9
1 2.5
2.6
2.4
2.2
0.8
7.5
2.5
40
35
30
25
20
1 .8
1 .6
1 .4
1 .2
1 5
1 0
1 5
1 0
5
0
2
5
0
1
-50
0
4
Fig. 4. Temperature Dependence of V
Fig. 2. Extended Output Characteristics
V
T
G E
-25
J
= 1 25
-40
= 1 5V
5
Fig. 6. Input Admittance
25
5
º
º
C
T
º
C
0
C
J
- Degrees Centigrade
V
1 0
G E
@ 25 deg. C
25
V
V
= 1 7V
6
GE
CE
IXGH 10N170A
IXGT
- Volts
50
1 5
- Volts
7
I
75
C
20
= 1 0A
I
C
I
= 5A
C
= 2.5A
1 00
10N170A
8
1 5V
1 3V
1 1 V
9V
25
7V
CE(sat)
1 25
1 50
30
9