IXGT10N170A IXYS, IXGT10N170A Datasheet
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Manufacturer Part Number
IXGT10N170A
Description
IGBT NPT 1700V 10A TO-268
Specifications of IXGT10N170A
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
6V @ 15V, 5A
Current - Collector (ic) (max)
10A
Power - Max
140W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
10
Ic90, Tc=90°c, Igbt, (a)
5
Vce(sat), Max, Tj=25°c, Igbt, (v)
6
Tfi, Typ, Igbt, (ns)
190
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.6
Rthjc, Max, Igbt, (°c/w)
1.1
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
High Voltage
IGBT
Symbol
BV
V
I
I
V
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
© 2003 IXYS All rights reserved
CM
CES
GES
C25
C90
SC
JM
GE(th)
GEM
J
stg
CE(sat)
CES
CGR
GES
C
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
T
Mounting torque (M3)
C
C
C
GE
J
J
C
C
C
GE
J
C
CE
CE
= 125°C, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= 250 µA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CES
CE
= 15 V
= ±20 V
= 125°C, R
GE
CE
= 1200 V; V
= V
= 0 V
GE
GE
Note 1
= 1 MΩ
G
= 22Ω
T
T
GE
(T
J
J
J
= 25°C
= 125°C
= 15 V, R
= 25°C, unless otherwise specified)
T
T
J
J
(TO-247)
= 25°C
= 125°C
TO-247
TO-268
IXGH 10N170A
IXGT 10N170A
G
= 22Ω
1700
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
@ 0.8 V
typ.
4.5
5.2
1.13/10Nm/lb.in.
I
CM
1700
1700
300
±20
±30
= 20
10
140
150
10
20
max.
CES
±100
5
6
4
500
5.0
6.0
25
°C
µs
µA
µA
nA
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-268 (IXGT)
V
I
V
t
TO-247 AD (IXGH)
G = Gate,
E = Emitter,
Features
Applications
Advantages
C25
fi(typ)
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
Very high frequency
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
G
C
= 1700
=
=
=
E
C = Collector,
TAB = Collector
E
6.0
DS98991B(11/03)
10
35 ns
C (TAB)
C (TAB)
A
V
V
Related parts for IXGT10N170A
IXGT10N170A Summary of contents
... I = 250 µ GE(th 0.8 • V CES CE CES ± GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 10N170A IXGT 10N170A Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 22Ω 0 22Ω 140 -55 ... +150 150 -55 ... +150 (TO-247) 1.13/10Nm/lb.in. 300 TO-247 TO-268 ...
... Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25° ...
... Fig. 1. Output Characteristics @ 25 Deg Volts CE Fig. 3. Output Characteristics @ 125 Deg Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Volts GE © 2003 IXYS All rights reserved 2.6 2 º 7.5 5A 2.5 2. IXGH 10N170A IXGT Fig. 2. Extended Output Characteristics @ 25 deg Volts CE Fig. 4. Temperature Dependence ...
... I - Amperes C Fig. 11. Gate Charge 600V 0mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 0.9 0.8 0.7 0.6 0 off 0.8 0 Ohms G 0.4 0 ...
... IXYS All rights reserved Fig. 13. M axim um T ransient T herm al R esistance 10 Puls e W idth - millis ec onds IXGH 10N170A IXGT 10N170A ...
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