IXGA48N60A3 IXYS, IXGA48N60A3 Datasheet - Page 4

• Manufacturer Part Number: IXGA48N60A3
• Description: IGBT 300A 600V TO-263AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA48N60A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.35V @ 15V, 32A
• Current - Collector (ic) (max): 48A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 224
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.60
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
100
70
60
50
40
30
20
10
10
0
0.0001
0
0
T
f
J
10
= 1 MHz
= - 40ºC
125ºC
5
25ºC
20
Fig. 7. Transconductance
10
30
Fig. 9. Capacitance
15
40
I
C
V
0.001
- Amperes
CE
50
20
- Volts
60
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
70
30
80
35
0.01
90
Pulse Width - Seconds
100
40
100
90
80
70
60
50
40
30
20
10
16
14
12
10
8
6
4
2
0
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
10
T
R
dV / dt < 10V / ns
150
0.1
C
G
J
CE
G
= 32A
= 10mA
= 125ºC
= 5Ω
= 300V
IXGA48N60A3 IXGH48N60A3
20
200
30
250
Fig. 8. Gate Charge
40
Q
300
G
V
- NanoCoulombs
50
CE
350
- Volts
60
400
1
70
IXYS REF: G_48N60A3(56) 07-10-08-A
IXGP48N60A3
450
80
500
90
550
100
600
110 120
650
10