IXGA48N60A3 IXYS, IXGA48N60A3 Datasheet - Page 3

• Manufacturer Part Number: IXGA48N60A3
• Description: IGBT 300A 600V TO-263AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA48N60A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.35V @ 15V, 32A
• Current - Collector (ic) (max): 48A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 224
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.60
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0.0
0.0
6
0.2
0.2
7
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
0.4
0.4
vs. Gate-to-Emitter Voltage
8
I
C
= 64A
0.6
0.6
9
32A
16A
V
V
@ 125ºC
0.8
0.8
V
@ 25ºC
10
GE
CE
CE
- Volts
- Volts
- Volts
1.0
1.0
11
V
GE
V
GE
= 15V
1.2
1.2
12
13V
11V
= 15V
13V
11V
T
1.4
1.4
13
J
7V
9V
= 25ºC
9V
7V
1.6
1.6
14
1.8
1.8
15
200
180
160
140
120
100
330
300
270
240
210
180
150
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
90
60
30
0
0
4.5
-50
0
V
GE
V
5.0
Fig. 2. Extended Output Characteristics
= 15V
GE
-25
13V
= 15V
IXGA48N60A3 IXGH48N60A3
2
Fig. 4. Dependence of V
5.5
T
Fig. 6. Input Admittance
0
J
9V
Junction Temperature
11V
7V
6.0
= 125ºC
4
T
- 40ºC
J
25ºC
- Degrees Centigrade
25
6.5
V
V
@ 25ºC
6
CE
GE
7.0
50
- Volts
- Volts
8
7.5
IXGP48N60A3
75
I
I
I
C
C
CE(sat)
8.0
C
= 64A
= 32A
10
= 16A
100
8.5
on
12
125
9.0
150
9.5
14