IXGA42N30C3 IXYS, IXGA42N30C3 Datasheet - Page 4

• Manufacturer Part Number: IXGA42N30C3
• Description: IGBT 42A 300V TO-263AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA42N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 42A
• Current - Collector (ic) (max): 42A
• Power - Max: 223W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 250
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 42
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 65
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.2
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
100
60
55
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
0
0
f = 1 MHz
20
5
Fig. 7. Transconductance
10
40
Fig. 9. Capacitance
0.0001
15
I
60
C
V
CE
- Amperes
20
- Volts
80
25
Fig. 11. Maximum Transient Thermal Impedance
100
0.001
T
30
J
C ies
C oes
C res
= - 40ºC
125ºC
25ºC
120
35
Pulse Width - Seconds
140
40
0.01
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
50
0
T
R
dV / dt < 10V / ns
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
J
G
C
G
CE
= 125ºC
= 10 Ω
= 42A
= 10 mA
10
= 150V
IXGA42N30C3 IXGH42N30C3
100
0.1
20
Fig. 8. Gate Charge
Q
150
30
G
V
- NanoCoulombs
CE
- Volts
40
200
50
1
IXGP42N30C3
250
60
70
300
10
80