IXGA42N30C3 IXYS, IXGA42N30C3 Datasheet - Page 3

• Manufacturer Part Number: IXGA42N30C3
• Description: IGBT 42A 300V TO-263AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA42N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 42A
• Current - Collector (ic) (max): 42A
• Power - Max: 223W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 250
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 42
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 65
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.2
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
90
80
70
60
50
40
30
20
10
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
6
0.4
7
Fig. 5. Collector-to-Emitter Voltage
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
8
0.8
I
C
0.8
= 84A
9
42A
21A
V
V
V
CE
1.2
CE
GE
@ 125ºC
@ 25ºC
10
- Volts
- Volts
- Volts
1.2
V
GE
V
11
1.6
= 15V
GE
13V
11V
= 15V
13V
11V
1.6
12
2.0
T
J
13
9V
7V
5V
= 25ºC
2.0
5V
9V
2.4
7V
14
2.4
2.8
15
325
300
275
250
225
200
175
150
125
100
120
110
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
75
50
25
90
80
70
60
50
40
30
20
10
0
0
-50
4.0
0
V
GE
V
GE
4.5
Fig. 2. Extended Output Characteristics
= 15V
-25
2
IXGA42N30C3 IXGH42N30C3
13V
11V
= 15V
Fig. 4. Dependence of V
5.0
4
0
Fig. 6. Input Admittance
9V
7V
5V
Junction Temperature
5.5
T
J
- Degrees Centigrade
T
25
6
J
V
6.0
V
= 125ºC
CE
GE
- 40ºC
@ 25ºC
25ºC
- Volts
I
I
- Volts
I
C
C
6.5
50
C
8
= 84A
= 42A
= 21A
7.0
10
75
IXGP42N30C3
CE(sat)
7.5
100
12
8.0
on
125
14
8.5
150
9.0
16