FGL60N100BNTD Fairchild Semiconductor, FGL60N100BNTD Datasheet - Page 4

• Manufacturer Part Number: FGL60N100BNTD
• Description: IGBT N-CH 1000V 60A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL60N100BNTD

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1000 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 500 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.9V
• Power Dissipation Pd: 180W
• Collector Emitter Voltage V(br)ceo: 1kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-264
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL60N100BNTD Rev.A2
Fig 7. Capacitance Characteristics
1 0 0 0
Fig 9. Switching Characteristics vs.
Fig 11. SOA Characteristics
1 0 0
10000
1000
100
100
0.1
T d o ff
T d o n
10
V
V
1
T f
T r
0
C C
G E
Collector Current
1
Common Emitter
V
T
1 0
= 6 0 0 V , R g = 5 1
= 1 5 V , T
I
I
C
C
GE
C
= 25
MAX. (Pulsed)
Single Nonrepetitive Pulse
T
Curve must be darated
linearly with increase
in temperature
MAX. (Continuous)
= 0V, f = 1MHz
C
= 25
o
C
5
C
= 2 5
o
2 0
Collector-Emitter Voltage, V
C
Collector-Emitter Voltage, V
o
C
C o lle cto r C urre nt, I
Ω
DC Operation
10
10
3 0
15
4 0
1ms
C
100
20
[A ]
CE
5 0
CE
[V]
100us
[V]
25
Coes
Cres
6 0
50us
Cies
1000
30
10000
Fig 8. Switching Characteristics vs.
Fig 10. Gate Charge Characteristics
1E-3
1000
Fig 12. Transient Thermal Impedance of IGBT
0.01
20
15
10
100
0.1
5
0
10
10
1
0
0
Common Emitter
V
T
0.05
0.02
0.01
0.5
0.2
0.1
C
CC
single pulse
=25
V
V
T
=600V, R
Gate Resistance
CC
GE
C
=25
=600V, I
=15V
o
10
C
50
o
C
-4
Rectangular Pulse Duration [sec]
L
50
=10
C
=60A
Ω
100
Gate Charge, Q
10
Gate Resistance, R
-3
100
150
10
-2
g
[nC]
200
10
150
G
-1
[?]
250
10
0
200
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Tdoff
Tdon
Tr
Tf
300
10
1