FGL60N100BNTD Fairchild Semiconductor, FGL60N100BNTD Datasheet - Page 2

• Manufacturer Part Number: FGL60N100BNTD
• Description: IGBT N-CH 1000V 60A TO-264
• Manufacturer: Fairchild Semiconductor

Specifications of FGL60N100BNTD

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1000 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 500 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.9V
• Power Dissipation Pd: 180W
• Collector Emitter Voltage V(br)ceo: 1kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Channel Type: N
• Collector-emitter Voltage: 1kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-264
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGL60N100BNTD Rev.A2
Electrical Characteristics of IGBT
Electrical Characteristics of DIODE
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
V
t
I
CES
GES
d(on)
r
d(off)
f
rr
R
Symbol
Symbol
GE(th)
CE(sat)
FM
ies
oes
res
g
ge
gc
CES
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
Parameter
Parameter
I
I
I
V
F
F
F
RRM
= 15A
= 60A
= 60A di/dt = 20 A/us
V
V
V
V
f = 1MHz
V
R
Resistive Load, T
V
V
I
I
I
T
C
C
C
GE
CE
GE
CE
CC
CE
GE
G
T
C
= 1000V
= 10A
= 60A
C
= 60mA, V
= 25°C unless otherwise noted
= 51Ω, V
=10V
= 25°C unless otherwise noted
= 1000V, V
= 600 V, I
= 0V, I
= ± 25, V
= 600 V, I
= 15V
Test Conditions
Test Conditions
,
,
,
V
C
,
T
V
V
GE
GE
= 1mA
C
CE
CE
GE
GE
C
C
=15V,
= 25°C
GE
= 0V,
= 60A,
= 60A,
= 0V
= V
= 15V
= 15V
C
= 0V
= 25°C
GE
1000
Min.
4.0
Min.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
6000
Typ.
260
200
140
320
630
130
275
Typ.
5.0
1.5
2.5
0.05
45
95
1.2
1.8
1.2
--
--
--
± 500
Max.
Max.
250
350
1.0
7.0
1.8
2.9
1.7
2.1
1.5
--
--
--
--
--
--
--
--
--
2
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Units
Units
mA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µs
V
V
V
V
V
V