IXSH35N140A IXYS, IXSH35N140A Datasheet - Page 4

• Manufacturer Part Number: IXSH35N140A
• Description: IGBT 1400V 70A SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH35N140A

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1400V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1400
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): 35
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Igbt, (ns): 400
• Eoff, Typ, Tj=125°c, Igbt, (mj): 9.5
• Rthjc, Max, Igbt, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
35
30
25
20
15
10
18
16
14
12
10
15
12
5
0
8
6
4
2
0
9
6
3
0
10
0
0
T
J
V
I
I
R
R
V
V
C
G
= -40ºC
CE
GE
CE
T
G
G
125ºC
= 35A
= 10mA
Fig. 9. Dependence of E
= 30 Ω - - - - - -
J
25ºC
= 3 Ω
Fig. 7. Transconductance
= 960V
= 1 25ºC
= 700V
= 15V
20
20
20
Fig. 11. Gate Charge
T
Q
J
40
= 25ºC
30
40
G
I
I
C
- nanoCoulombs
C
- Amperes
- Amperes
60
60
40
80
80
50
off
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
on I
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
100
100
60
c
120
120
70
10000
1000
100
20
18
16
14
12
10
10
18
16
14
12
10
8
6
4
2
0
8
6
4
25
0
0
R
R
V
V
T
V
V
f = 1MHz
GE
CE
G
G
J
GE
CE
Fig. 8. Dependence of E
= 30 Ω - - - - - -
= 125ºC
= 3 Ω
Fig. 10. Dependence of E
= 960V
= 15V
5
= 960V
= 15V
5
Fig. 12. Capacitance
T
50
10
J
- Degrees Centigrade
Tem perature
10
15
R
V
CE
G
- Ohms
75
20
- Volts
15
IXSH 35N140A
25
20
off
I
I
I
C
C
C
100
off
on R
30
= 17.5A
= 70A
= 35A
I
C
I
I
C ies
C oes
C res
on
C
C
= 70A
= 35A
= 17.5A
25
6,534,343
G
35
125
40
30