IXSH35N140A IXYS, IXSH35N140A Datasheet - Page 2

• Manufacturer Part Number: IXSH35N140A
• Description: IGBT 1400V 70A SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH35N140A

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1400V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1400
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): 35
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Igbt, (ns): 400
• Eoff, Typ, Tj=125°c, Igbt, (mj): 9.5
• Rthjc, Max, Igbt, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
of the following U.S. patents:
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
Test Conditions
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
C
Inductive load, T
I
V
Inductive load, T
I
V
= I
V
I
C
C
C
CE
CE
CE
= I
= I
= I
C90
= 960 V, R
= 25 V, V
= 960 V, R
C90
C90
C90
; V
, V
, V
, V
CE
GE
GE
GE
= 10 V,
= 15 V
= 15 V
= 15 V, V
GE
G
G
= 0 V, f = 1 MHz
= 3.0 Ω
= 3.0 Ω
J
J
= 125°C
= 25°C
CE
= 0.5 V
(T
J
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
CES
min.
16
Characteristic Values
3000
typ.
0.25
235
120
150
200
240
400
4.0
9.5
23
60
32
50
40
60
40
65
4
max.
0.42 K/W
300
450
K/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
S
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXSH 35N140A
6,534,343