IRG4PC30UDPBF International Rectifier, IRG4PC30UDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4PC30UDPBF
• Description: IGBT W/DIODE 600V 23A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PC30UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 12A
• Current - Collector (ic) (max): 23A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 1100 pF
• Current, Collector: 23 A
• Energy Rating: 0.54 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 100 W
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Speed, Switching: 8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.52 V
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 23A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Dc Collector Current: 23A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Current Rating: 23A
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PC30UDPBF

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1 0 0
Fig. 2 - Typical Output Characteristics
0.1
2 0
1 6
1 2
1 0
8
4
0
1
0.1
0.1
V
C E
, C o lle cto r-to -E m itte r V o lta g e (V )
6 0% of ra te d
vo l ta ge
1
T = 2 5 ° C
Fig. 1 - Typical Load Current vs. Frequency
J
V
2 0 µ s P U L S E W ID T H
G E
= 1 5 V
(Load Current = I
T = 1 5 0 °C
J
1
f, Frequenc y (k Hz)
1 0
A
RMS
of fundamental)
1 0 0
0.1
Fig. 3 - Typical Transfer Characteristics
1 0
1
5
T = 1 5 0 °C
J
V
6
G E
1 0
, G a te -to -E m itte r V o lta g e (V )
IRG4PC30UD
7
T = 2 5 °C
J
8
Du ty cy cle : 50 %
T = 12 5° C
T
Gate d rive as spe cified
Tu rn-on los ses in clu de
effec ts of revers e reco ve ry
Power D iss ipat ion = 24W
J
sink
9
V
5 µ s P U L S E W ID T H
C C
= 90 °C
= 1 0 V
1 0
1 1
3
1 0 0
1 2
A
A